Attenuators
SemiGen's RF and microwave attenuator chips deliver precise attenuation level accuracy and exceptional frequency flatness for demanding military, aerospace, and commercial applications. The 01311 attenuator chip series provides attenuation level accuracy of ±0.2 dB for 1 to 10 dB values and ±0.3 dB for 11 to 20 dB values. Every RF/microwave attenuator chip is 100% tested before shipment to verify performance and ensure consistent, reliable operation.
Attenuators
| Part # | Nominal Attenuation (dB) | Part # | Nominal Attenuation (dB) |
|---|---|---|---|
| 01311-01A | 1 | 01311-11A | 11 |
| 01311-02A | 2 | 01311-12A | 12 |
| 01311-03A | 3 | 01311-13A | 13 |
| 01311-04A | 4 | 01311-14A | 14 |
| 01311-05A | 5 | 01311-15A | 15 |
| 01311-06A | 6 | 01311-16A | 16 |
| 01311-07A | 7 | 01311-17A | 17 |
| 01311-08A | 8 | 01311-18A | 18 |
| 01311-09A | 9 | 01311-19A | 19 |
| 01311-10A | 10 | 01311-20A | 20 |
Fused Silica Dielectric
Die Size:
Length = .080”
Width =.100”
Thickness = .010”
Tolerance: Length & Width +/- .002”
Thickness +/- .0005”
Circuit Side
TaN
TiW 800Å
Au 120µ” min.
Back Side
TiW 800Å
Ni 1500Å
Au 120µ”
Attenuator and Attenuator Pad Details
Increment Values
1 dB to 20 dB in 1 dB increments. Higher values are available upon request
Substrate Material
The standard Attenuator is fabricated on quartz, however alumina and aluminum nitride substrates are also available upon request.
Film Stability
Less than 0.1% resistance change after 1000 hours at 125°C
Temperature Coefficient of Resistance
Less than ±100 ppm within the range of -55°C to +150°C
Power Handling Characteristics
1W CW at 70°C (Three 0.001 Au Wire Bonds, Each Conductor)
Features:
- Excellent flatness and attenuation accuracy
- Superior Power Handling
- Metallization
Applications:
These ion beam etched thin film attenuators are an ideal solution for a wide range of applications including microwave radio, military subsystems, fiber optics, scientific instruments and sensor applications up to 28 GHz.
Downloads:
Thin Film Circuit Design Guidelines Provide Keys to Successful Layout of Ion Beam Etched Circuits
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