The 01311 attenuator chip series is designed to achieve precision and tight flatness with an attenuation accuracy of ± 0.2 dB on our 1-10 dB pads and ± 0.3 dB on our 11-20 dB pads. SemiGen tests 100% of all attenuator chips prior to shipment to verify that they meet specifications.
|Part #||Nominal Attenuation (dB)||Part #||Nominal Attenuation (dB)|
Fused Silica Dielectric
Length = .080”
Thickness = .010”
Tolerance: Length & Width +/- .002”
Thickness +/- .0005”
Au 120µ” min.
Attenuator and Attenuator Pad Details
1 dB to 20 dB in 1 dB increments. Higher values are available upon request
The standard Attenuator is fabricated on quartz, however alumina and aluminum nitride substrates are also available upon request.
Less than 0.1% resistance change after 1000 hours at 125°C
Temperature Coefficient of Resistance
Less than ±100 ppm within the range of -55°C to +150°C
Power Handling Characteristics
1W CW at 70°C (Three 0.001 Au Wire Bonds, Each Conductor)
These ion beam etched thin film attenuators are an ideal solution for a wide range of applications including microwave radio, military subsystems, fiber optics, scientific instruments and sensor applications up to 28 GHz.