Point Contact Diodes

SemiGen’s 1N Series of Point Contact Mixer Diodes are designed for applications through KA band. Each device in this series is specially designed for low noise figure, impedance and VSWR. Our devices are drop in replacements for all military and commercial requirements. These diodes employ epitaxial silicon grown in a specific reactor for optimized performance. They are suitable for use in stripline applications.

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PK 75
Semigen package PK-75
PK 85
Semigen package PK-85
PK 100
Semigen package PK-100
PK 102
Semigen package PK-102

Point Contact Diode Specifications

SemiGen Point Contact Diode Rectification, Tangential Signal Sensitivity, Video Resistance and Operating Frequency Specifications
Part Number Rectification
Efficiency
MIN
Tangential
Signal
Sensitivity
TYP
(dB)
Video
Resistance
MAX
(Ω)
Operating
Frequency
(MHz)
Package Style
1N83065%--100PK85
1N830A65% @5 Vdc--100PK85
1N32-49223000PK100
1N32A-47173000PK100
1N833-40189375PK85
1N833A-45189375PK85
1N1611-513.19000PK102
1N1611A-533.19000PK100
1N1611B-533.19000PK100
1N3778-50109375PK101
SemiGen Point Contact Mixer Diode Electrical Specifications at 3.060 GHz
Part
Number
Noise Figure
3.060 GHz
L0 = 1.0 mW
RI = 100 Ω
MAX
(db)
VSWR
3.060 GHz
L0 = 1.0 mW
RI = 100 Ω
MAX
(Ratio)
IF Impedance
3.060 GHz
L0 = 1.0 mW
RI = 100 Ω
MIN/MAX
(Ω)
Conversion Loss
3.060 GHz
L0 = 1.0 mW
RI = 100 Ω
MAX
(db)
Package
Style
1N21C8.5-325 -465-PK100
1N21D7.5-325 - 465-PK100
1N21E7.01.5350 - 450-PK100
1N21WE7.01.5350 - 450-PK101
1N21F6.01.3350 - 450-PK100
1N21G5.51.3350 - 4505.0PK100
1N21WG5.51.3350 - 4505.0PK101
1N416C6.51.5335 - 465-PK101
1N416D7.51.3335 - 465-PK101
1N416E7.01.3335 - 4657.0PK101
1N416F6.51.3335 - 4656.5PK101
1N416G6.01.3335 - 4656.0PK101
1N8318.5-300 - 500-PK85
1N831A7.0-300 - 500-PK85
1N831B6.5-300 - 500-PK85
1N831C6.0-300 - 500-PK85
SemiGen Point Contact Mixer Diode Electrical Specifications at 9.375 GHz
Part
Number
Noise Figure
9.375 GHz
L0 7.5= 1.0 mW
RI = 100 Ω
MAX
(db)
VSWR
9.375 GHz
L0 = 1.0 mW
RI = 100 Ω
MAX
(Ratio)
IF Impedance
9.375 GHz
L0 = 1.0 mW
RI = 100 Ω
MIN/MAX
(Ω)
Conversion Loss
9.375 GHz
L0 = 1.0 mW
RI = 100 Ω
MAX
(db)
Package
Style
1N2312.0-200 - 600-PK100
1N23A11.0-200 - 600-PK100
1N23B10.01.5335 - 465-PK100
1N23C9.01.5335 - 465-PK100
1N23D8.51.3335 - 465-PK100
1N23E7.51.3335 - 4657.0PK100
1N23WE7.51.3335 - 4657.0PK101
1N23F7.01.3335 - 4656.5PK100
1N23G6.51.3335 - 4656.0PK100
1N23WG6.51.3335 - 4656.0PK101
1N23H6.01.3335 - 4655.5PK100
1N415C9.01.5335 - 465-PK101
1N415D8.51.3335 - 465-PK101
1N415E7.51.3335 - 4657.0PK101
1N415F7.01.3335 - 4656.5PK101
1N415G6.51.3335 - 4656.0PK101
1N415H6.01.3335 - 4655.5PK101
1N8329.5-250 - 500-PK85
1N832A7.5-250 - 500-PK85
1N832B7.0-250 - 500-PK85
1N832C6.5-250 - 500-PK85

Maximum Ratings

SemiGen Point Contact Diode Maximum Ratings for Operating Temperature, Storage Temperature and Power Dissipation
Operating
Temperature
Storage
Temperature
Power Dissipation
@ 25ºC
-55ºC to +150ºC -65ºc to +200ºC 250mW
(derate linearly to zero at 150º C)

Features:

  • For matched Fwd pair use suf x M after part number.
  • For reverse device use suf x R.
  • For Matched Fwd and Rev use suf x MR.

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