PIN Diodes

The SemiGen SGP7000 series of PIN Diodes are processed with a high-resistivity epi that have intrinsic layers that range in thickness from 4 micron to 200 micron depending on performance specifications. These devices are typically manufactured with either a robust thermal-oxide passivation or ceramic glass for durable high-power applications. These diodes are made with a grown junction P++ layer that yields abrupt junction structures that provide low punch through voltages and minimize autodoping. They are available as chips or in your choice of packages.

Request a Quote

PK 11
Semigen package PK-11
PK 19
Semigen package PK-19
PK 20
Semigen package PK-20
PK 25
Semigen package PK-25
PK 28
Semigen package PK-28
PK 31
Semigen package PK-31
PK 32
Semigen package PK-32
PK 33
Semigen package PK-33
PK 35
Semigen package PK-35
PK 36
Semigen package PK-36
PK 37
Semigen package PK-37
PK 38
Semigen package PK-38
PK 43
Semigen package PK-43
PK 75
Semigen package PK-75

Ultra-Fast Switching PINs

SemiGen Ultra-Fast Switching PIN Diode Specifications
Part
Number
Vb 10 μA
Volts
MIN
Cj-10
MAX
(pF)
TL
TYP
(nS)
Øjc
MAX
deg C/W
TS.
MAX
NS
RS @ 50 mA
Ohms
MAX
RS @ 10mA
OHMS
TYP
SGP7010250.1010601.50.701.00
SGP7011250.1510501.50.550.80
SGP7012250.2010401.50.450.70
SGP7013250.2510351.50.400.60

Fast-Switching, Low-Power PINs

SemiGen Fast-Switching Low-Power PIN Diode Specifications
Part
Number
Vb 10 μA
Volts
MIN
Cj-10
MAX
(pF)
TL
TYP
(nS)
Δjc
MAX
deg C/W
TS.
MAX
NS
RS @ 75 mA
Ohms
MAX
RS @ 20mA
OHMS
TYP
SGP7020700.05608050.901.20
SGP7021700.10607050.701.00
SGP7022700.15606050.600.90
SGP7023700.20605550.500.70
SGP7024700.25605050.450.50
SGP70251000.0310090101.201.90
SGP70261000.0710080100.901.50
SGP70271000.1010070100.701.20
SGP70281000.1510060100.601.00
SGP70291000.2010055100.500.90
SGP70301000.3010050150.450.80
SGP70312000.0322590151.903.00
SGP70322000.0722580151.202.20
SGP70332000.1022570150.901.60
SGP70342000.1522560150.801.00
SGP70352000.2022555150.700.80
SGP70362000.3022550150.600.70

Medium-Power General-Purpose PINs

SemiGen Medium-Power General-Purpose PIN Diode Specifications
Part
Number
Vb 10 μA
Volts
MIN
Cj-10
MAX
(pF)
TL
TYP
(nS)
Δjc
MAX
deg C/W
TS.
MAX
NS
RS @ 75 mA,
F = 100 MHz
Ohms
MAX
RS @ 20mA
OHMS
TYP
SGP70402000.0340065202.603.50
SGP70412000.0740060201.502.20
SGP70422000.1040055201.302.00
SGP70432000.1540050201.001.90
SGP70442000.2040045200.801.70
SGP70452000.3040040200.701.40
SGP70462000.5040020200.601.20
SGP70472000.0360060252.603.50
SGP70482000.0760055251.603.20
SGP70492000.1060050251.202.00
SGP70502001.5060045250.901.90
SGP70512000.2060040250.801.70
SGP70522000.3060035250.701.40
SGP70532000.5060015250.601.20

High-Power Switching and Attenuation PINs

SemiGen High-Power Switching and Attenuation PIN Diode Specifications
Part
Number
Vb 10 μA
Volts
MIN
Cj-10
MAX
(pF)
TL
TYP
(μS)
Rs @ 1 mA
MAX
(Ohms)
RS @ 10 mA
MAX
(Ohms)
RS @ 100 mA
MAX
(Ohms)
Øjc
MAX
deg C/W
SGP70602500.051.0025.0010.002.0020.00
SGP70612500.081.0020.008.001.5020.00
SGP70622500.101.0015.006.001.2020.00
SGP70632500.201.008.003.501.0015.00
SGP70642500.301.506.002.000.8015.00
SGP70655000.081.5040.008.001.5015.00
SGP70665000.101.5015.005.001.2015.00
SGP70675000.201.5010.004.001.0012.00
SGP70685000.302.008.003.500.8010.00
SGP70695000.502.006.002.000.7010.00

High-Voltage PINs

SemiGen High-Voltage PIN Diode Specifications
Part
Number
Vb 10 μA
Volts
MIN
CT V=100 V
F = 1 MHz
pF
MAX
TL = 10
mA
μsec
MIN
RS @ 100 mA,
F = 100 MHz
Ohms
MAX
Thermal
Resistance
(C/W)
Typical
SGP707010000.101.001.5030.00
SGP707110000.252.001.2025.00
SGP707210000.503.001.0020.00
SGP707310000.753.500.8010.00
SGP707410001.304.000.408.00
SGP707510002.504.500.355.00

Features:

  • Low Capacitance and Resistance
  • Easily Bondable with our F.A.C. Mesas
  • High Reliability

Applications:

For use in low- to high-power switch, attenuator, duplexer and phase-shifting applications from 2 to 20 GHz.

 

Downloads:

The Ubiquitous Microwave Diode. Chapter 2: PIN Diodes
Blog

The Ubiquitous Microwave Diode. Chapter 2: PIN Diodes

Tech Brief Describes How To Bond Small Mesa Chips
Resource

Tech Brief Describes How To Bond Small Mesa Chips

ISO 9001:2008 Registered ITAR Registered
54 Grenier Field Road Londonderry, NH 03053   |   603-624-8311   |   Contact SemiGen   |   Privacy Notice
All rights reserved.  ©2010-2026 SemiGen, Inc., A Naprotek Company
X
We use cookies to enhance your user experience. By continuing to browse this site, you are giving your consent for cookies to be used. For more information, please refer to our Privacy Policy.