Substrate Properties

SemiGen offers wafer processing of silicon wafers, as well as processing ceramic substrates. Our processing services include any combination of photolithography, wet etch, dry etch, metallization, grinding, polishing, and in-process metrology.

 

Please see the chart below for additional material specifications information.

 

As fired 99.6% Alumina
CLA Surface Roughness (µ-inches) < 4
Thickness Available (inches) .005-.025
Thickness Tolerance (inches) +/- 0.001
Dissipation Factor at 1 MHz 0.0001
Dielectric Constant (k) @ 1 MHz 9.9
Thermal Conductivity (W/mK) 30
Coefficient of Thermal Exp. (ppm/°C) 7.0-8.3 (25-1000°C)
Applications Low to medium power DC & RF circuits

 

 

Polished 99.6% Alumina
CLA Surface Roughness (µ-inches) < 1
Thickness Available (inches) .004-.040
Dissipation Factor at 1 MHz 0.0001
Thickness Tolerance (inches) +/- 0.0005
Dielectric Constant (k) @ 1 MHz 9.9
Dielectric Constant (k) @ 4 MHz 9.9
Dielectric Constant (k) @ 10 MHz 9.7
Thermal Conductivity (W/mK) 30
Coefficient of Thermal Exp. (ppm/°C) 7.0-8.3 (25-1000°C)
Applications Low to medium power RF and Microwave circuits

 

 

Lapped 98% Aluminum Nitride
CLA Surface Roughness (µ-inches) 25
Thickness Available (inches) .004-.120
Thickness Tolerance (inches) +/- 0.001
Dissipation Factor at 1 MHz 0.001
Dielectric Constant (k) 8.6
Thermal Conductivity (W/mK) 170 min
Coefficient of Thermal Exp. (ppm/°C) 4.6 at (25-300°C)
Applications High power DC/RF/microwave circuits

 

 

Polished 98% Aluminum Nitride
CLA Surface Roughness (µ-inches) < 2
Thickness Available (inches) .004-.100
Thickness Tolerance (inches) +/- 0.0005
Dissipation Factor at 1 MHz 0.0005
Dielectric Constant (k) 8.6
Thermal Conductivity (W/mK) 170 min
Coefficient of Thermal Exp. (ppm/°C) 4.6 at (25-300°C)
Applications High power DC/RF/microwave circuits

 

 

Polished 99.5% Beryllium-Oxide
CLA Surface Roughness (µ-inches) < 3
Thickness Available (inches) .007-.080
Thickness Tolerance (inches) +/- 0.0005
Dissipation Factor at 1 MHz 0.0004
Dielectric Constant (k) 6.5
Thermal Conductivity (W/mK) 270
Coefficient of Thermal Exp. (ppm/°C) 9 at (25-1000°C)
Applications High power DC/RF/microwave circuits

 

 

Ferrite/Garnet
CLA Surface Roughness (µ-inches) 4 – 40
Thickness Available (inches) .010 and up
Thickness Tolerance (inches) +/- 0.0005
Dissipation Factor at 1 MHz .00015 – .0025
Dielectric Constant (k) 14.5 – 17.6
Thermal Conductivity (W/mK) .7 – 4.5
Coefficient of Thermal Exp. (ppm/°C) 2.4 – 10.8
Applications Microwave, circulators, isolators, components

 

 

Borosilicate Glass
CLA Surface Roughness (µ-inches) < 3.9×10-8
Thickness Available (inches) 0.02756 – 1.000
Thickness Tolerance (inches) +/- 0.0005
Dissipation Factor at 1 MHz .00037
Dielectric Constant (k) 4
Thermal Conductivity (W/mK) 1.2
Coefficient of Thermal Exp. (ppm/°C) 3.25 (through 300°C)
Applications Optical windows, biomedical

 

 

Sapphire
CLA Surface Roughness (µ-inches) < .1
Thickness Available (inches) .003-.250
Thickness Tolerance (inches) +/- 0.0005
Dissipation Factor at 1 MHz 0.00086/0.0003
Dielectric Constant (k) 9.3-11.4
Thermal Conductivity (W/mK) 40
Coefficient of Thermal Exp. (ppm/°C) A plane at 25°C 5.3
Applications Optical

 

 

Silicon
CLA Surface Roughness (µ-inches) 7.8 x 10-7
Thickness Available (inches) .25mm – .5mm
Dissipation Factor at 1 MHz .005
Dielectric Constant (k) 11.8
Thermal Conductivity (W/mK) 125
Coefficient of Thermal Exp. (ppm/°C) 2.5
Applications Optical, medical, IR, sensors, components

 

 

Polished Titanates
CLA Surface Roughness (µ-inches) < 3
Thickness Available (inches) .005-.080
Thickness Tolerance (inches) +/- 0.0005
Dissipation Factor at 1 MHz 0.0004
Dielectric Constant (k) 38-200
Thermal Conductivity (W/mK) 1.8-4.2
Coefficient of Thermal Exp. (ppm/°C) 5.8
Applications RF & microwave circuits requiring high Q

 

 

Polished Fused Silica/Z-Cut Quartz
CLA Surface Roughness (µ-inches) 60/40 optical
Thickness Available (inches) .003-.040
Thickness Tolerance (inches) +/- 0.0005
Dissipation Factor at 1 MHz 0.000015
Dielectric Constant (k) 3.8
Thermal Conductivity (W/mK) 1.4
Coefficient of Thermal Exp. (ppm/°C) 0.56
Applications High frequency circuits requiring extremely low loss performance

 

 

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