Substrate Properties
SemiGen offers wafer processing of silicon wafers, as well as processing ceramic substrates. Our processing services include any combination of photolithography, wet etch, dry etch, metallization, grinding, polishing, and in-process metrology.
Please see the chart below for additional material specifications information.
| As fired 99.6% Alumina | |||
| CLA Surface Roughness (µ-inches) | < 4 | ||
| Thickness Available (inches) | .005-.025 | ||
| Thickness Tolerance (inches) | +/- 0.001 | ||
| Dissipation Factor at 1 MHz | 0.0001 | ||
| Dielectric Constant (k) @ 1 MHz | 9.9 | ||
| Thermal Conductivity (W/mK) | 30 | ||
| Coefficient of Thermal Exp. (ppm/°C) | 7.0-8.3 (25-1000°C) | ||
| Applications | Low to medium power DC & RF circuits | ||
| Polished 99.6% Alumina | |||
| CLA Surface Roughness (µ-inches) | < 1 | ||
| Thickness Available (inches) | .004-.040 | ||
| Dissipation Factor at 1 MHz | 0.0001 | ||
| Thickness Tolerance (inches) | +/- 0.0005 | ||
| Dielectric Constant (k) @ 1 MHz | 9.9 | ||
| Dielectric Constant (k) @ 4 MHz | 9.9 | ||
| Dielectric Constant (k) @ 10 MHz | 9.7 | ||
| Thermal Conductivity (W/mK) | 30 | ||
| Coefficient of Thermal Exp. (ppm/°C) | 7.0-8.3 (25-1000°C) | ||
| Applications | Low to medium power RF and Microwave circuits | ||
| Lapped 98% Aluminum Nitride | |||
| CLA Surface Roughness (µ-inches) | 25 | ||
| Thickness Available (inches) | .004-.120 | ||
| Thickness Tolerance (inches) | +/- 0.001 | ||
| Dissipation Factor at 1 MHz | 0.001 | ||
| Dielectric Constant (k) | 8.6 | ||
| Thermal Conductivity (W/mK) | 170 min | ||
| Coefficient of Thermal Exp. (ppm/°C) | 4.6 at (25-300°C) | ||
| Applications | High power DC/RF/microwave circuits | ||
| Polished 98% Aluminum Nitride | |||
| CLA Surface Roughness (µ-inches) | < 2 | ||
| Thickness Available (inches) | .004-.100 | ||
| Thickness Tolerance (inches) | +/- 0.0005 | ||
| Dissipation Factor at 1 MHz | 0.0005 | ||
| Dielectric Constant (k) | 8.6 | ||
| Thermal Conductivity (W/mK) | 170 min | ||
| Coefficient of Thermal Exp. (ppm/°C) | 4.6 at (25-300°C) | ||
| Applications | High power DC/RF/microwave circuits | ||
| Polished 99.5% Beryllium-Oxide | |||
| CLA Surface Roughness (µ-inches) | < 3 | ||
| Thickness Available (inches) | .007-.080 | ||
| Thickness Tolerance (inches) | +/- 0.0005 | ||
| Dissipation Factor at 1 MHz | 0.0004 | ||
| Dielectric Constant (k) | 6.5 | ||
| Thermal Conductivity (W/mK) | 270 | ||
| Coefficient of Thermal Exp. (ppm/°C) | 9 at (25-1000°C) | ||
| Applications | High power DC/RF/microwave circuits | ||
| Ferrite/Garnet | |||
| CLA Surface Roughness (µ-inches) | 4 – 40 | ||
| Thickness Available (inches) | .010 and up | ||
| Thickness Tolerance (inches) | +/- 0.0005 | ||
| Dissipation Factor at 1 MHz | .00015 – .0025 | ||
| Dielectric Constant (k) | 14.5 – 17.6 | ||
| Thermal Conductivity (W/mK) | .7 – 4.5 | ||
| Coefficient of Thermal Exp. (ppm/°C) | 2.4 – 10.8 | ||
| Applications | Microwave, circulators, isolators, components | ||
| Borosilicate Glass | |||
| CLA Surface Roughness (µ-inches) | < 3.9×10-8 | ||
| Thickness Available (inches) | 0.02756 – 1.000 | ||
| Thickness Tolerance (inches) | +/- 0.0005 | ||
| Dissipation Factor at 1 MHz | .00037 | ||
| Dielectric Constant (k) | 4 | ||
| Thermal Conductivity (W/mK) | 1.2 | ||
| Coefficient of Thermal Exp. (ppm/°C) | 3.25 (through 300°C) | ||
| Applications | Optical windows, biomedical | ||
| Sapphire | |||
| CLA Surface Roughness (µ-inches) | < .1 | ||
| Thickness Available (inches) | .003-.250 | ||
| Thickness Tolerance (inches) | +/- 0.0005 | ||
| Dissipation Factor at 1 MHz | 0.00086/0.0003 | ||
| Dielectric Constant (k) | 9.3-11.4 | ||
| Thermal Conductivity (W/mK) | 40 | ||
| Coefficient of Thermal Exp. (ppm/°C) | A plane at 25°C 5.3 | ||
| Applications | Optical | ||
| Silicon | |||
| CLA Surface Roughness (µ-inches) | 7.8 x 10-7 | ||
| Thickness Available (inches) | .25mm – .5mm | ||
| Dissipation Factor at 1 MHz | .005 | ||
| Dielectric Constant (k) | 11.8 | ||
| Thermal Conductivity (W/mK) | 125 | ||
| Coefficient of Thermal Exp. (ppm/°C) | 2.5 | ||
| Applications | Optical, medical, IR, sensors, components | ||
| Polished Titanates | |||
| CLA Surface Roughness (µ-inches) | < 3 | ||
| Thickness Available (inches) | .005-.080 | ||
| Thickness Tolerance (inches) | +/- 0.0005 | ||
| Dissipation Factor at 1 MHz | 0.0004 | ||
| Dielectric Constant (k) | 38-200 | ||
| Thermal Conductivity (W/mK) | 1.8-4.2 | ||
| Coefficient of Thermal Exp. (ppm/°C) | 5.8 | ||
| Applications | RF & microwave circuits requiring high Q | ||
| Polished Fused Silica/Z-Cut Quartz | |||
| CLA Surface Roughness (µ-inches) | 60/40 optical | ||
| Thickness Available (inches) | .003-.040 | ||
| Thickness Tolerance (inches) | +/- 0.0005 | ||
| Dissipation Factor at 1 MHz | 0.000015 | ||
| Dielectric Constant (k) | 3.8 | ||
| Thermal Conductivity (W/mK) | 1.4 | ||
| Coefficient of Thermal Exp. (ppm/°C) | 0.56 | ||
| Applications | High frequency circuits requiring extremely low loss performance | ||
