Schottky Barrier Bridge Quads
SemiGen’s Silicon Schottky Diodes are designed for applications through 40GHz. The special process technology utilizes various metal schemes to provide excellent performance of Low, Medium, and High Barrier applications. The end result is a low resistance diode with tightly controlled capacitance which allows for optimum performance. Low conversion loss and superior TSS make these diodes ideal for detector / mixer applications with frequency ranges from S band to Ka band as well as modulators, lower power limiters and high speed switches.
Low Barrier Bridge Quads
| Part Number | Breakdown Voltage @ 10 μA MIN (V) |
Forward Voltage @ 1 mA MAX (V) |
Delta Forward Voltage @ 1 mA MAX (mV) |
Total Capacitance @ 0 Vdc 1 Mhz TYP (pF) |
Series Resistance @ 5 mM TYP (Ω) |
|---|---|---|---|---|---|
| SBQ700 | 2.0 | 295 | 25 | 0.15 | 20 |
| SBQ703 | 2.0 | 295 | 25 | 0.20 | 16 |
| SBQ704 | 2.0 | 305 | 25 | 0.20 | 16 |
| SBQ705 | 2.0 | 325 | 25 | 0.15 | 16 |
| SBQ707 | 2.0 | 300 | 25 | 0.35 | 14 |
| SBQ708 | 2.0 | 325 | 25 | 0.30 | 14 |
Medium Barrier Bridge Quads
| Part Number | Breakdown Voltage @ 10 μA MIN (V) |
Forward Voltage @ 1 mA MAX (V) |
Delta Forward Voltage @ 1 mA MAX (mV) |
Total Capacitance @ 0 Vdc 1 Mhz TYP (pF) |
Series Resistance @ 5 mM TYP (Ω) |
|---|---|---|---|---|---|
| SBQ800 | 3.0 | 375 | 25 | 0.15 | 20 |
| SBQ803 | 3.0 | 375 | 25 | 0.20 | 16 |
| SBQ804 | 3.0 | 395 | 25 | 0.20 | 16 |
| SBQ805 | 3.0 | 425 | 25 | 0.15 | 16 |
| SBQ807 | 3.0 | 395 | 25 | 0.35 | 14 |
| SBQ809 | 3.0 | 475 | 25 | 0.25 | 14 |
High Barrier Bridge Quads
| Part Number | Breakdown Voltage @ 10 μA MIN (V) |
Forward Voltage @ 1 mA MAX (V) |
Delta Forward Voltage @ 1 mA MAX (mV) |
Total Capacitance @ 0 Vdc 1 Mhz TYP (pF) |
Series Resistance @ 5 mM TYP (Ω) |
|---|---|---|---|---|---|
| SBQ900 | 5.0 | 475 | 25 | 0.15 | 20 |
| SBQ903 | 5.0 | 475 | 25 | 0.20 | 16 |
| SBQ904 | 5.0 | 495 | 25 | 0.20 | 16 |
| SBQ905 | 5.0 | 515 | 25 | 0.15 | 16 |
| SBQ907 | 5.0 | 525 | 25 | 0.35 | 14 |
| SBQ909 | 5.0 | 625 | 25 | 0.25 | 14 |
Maximum Ratings
| Operating Temperature | Storage Temperature | Power Dissipation @ 25ºC |
|---|---|---|
| -55ºC to +150ºC | -65ºc to +200ºC | 250mW |
| (derate linearly to zero at 150º C) | ||
Features:
- Stable Performance
- Monolithic Construction
- Matched Electrical Performance
Applications:
For use in designs of doublers, modulators, and double balanced mixers up to 40 GHz.
Downloads:
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