Schottky Diodes

SemiGen’s Silicon Schottky Diodes are designed for applications through 40Ghz. The special process technology utilizes various metal schemes to provide excellent performance of Low, Medium, and High Barrier applications. The end result is a low resistance diode with tightly controlled capacitance which allows for optimum performance. Low conversation loss and superior TSS make these diodes ideal for detector / mixer applications with frequency ranges from S band to Ka band as well as modulators, lower power limiters and high speed switches.

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PK 10
Semigen package PK-10
PK 19
Semigen package PK-19
PK 20
Semigen package PK-20
PK 25
Semigen package PK-25
PK 28
Semigen package PK-28
PK 32
Semigen package PK-32
PK 37
Semigen package PK-37
PK 50
Semigen package PK-50
PK 75
Semigen package PK-75
PK 100
Semigen package PK-100

Low Barrier Schottky Diodes

Part Number Breakdown
Voltage
@ 10 μA
MIN
(V)
Forward
Voltage
@ 1 mA
MAX
(V)
Junction
Capacitance
@ 0 Vdc 1 Mhz
TYP
(V)
Series
Resistance
@ 5 mM
TYP
(Ohms)
Tangential
Signal
Sensitivity
TYP
(dB)
SLB100 3.0 0.250 0.14 20.0 -55
SLB101 3.0 0.280 0.20 20.0 -52
SLB102 3.0 0.300 0.12 20.0 -50
SLB103 3.0 0.320 0.14 20.0 -48
SLB104 3.0 0.250 0.15 20.0 -55
SLB105 3.0 0.280 0.15 20.0 -52
SLB106 3.0 0.300 0.12 20.0 -50
SLB107 3.0 0.320 0.14 20.0 -48
SLB108 3.0 0.250 0.14 20.0 -55
SLB109 3.0 0.280 0.15 20.0 -52
SLB110 3.0 0.300 0.14 20.0 -50
SLB111 3.0 0.320 0.25 20.0 -48
SLB112 4.0 0.250 0.20 20.0 -55
SLB113 4.0 0.280 0.15 20.0 -52
SLB114 4.0 0.300 0.12 20.0 -50
SLB115 4.0 0.320 0.15 0.35 -48

Medium Barrier Schottky Diodes

Part Number Breakdown
Voltage
@ 10 μA
MIN
(V)
Forward
Voltage
@ 1 mA
MAX
(V)
Junction
Capacitance
@ 0 Vdc 1 Mhz
TYP
(V)
Series
Resistance
@ 5 mM
TYP
(Ohms)
Tangential
Signal
Sensitivity
TYP
(dB)
SMB200 3.0 0.400 0.14 20.0 -52
SMB201 3.0 0.400 0.20 20.0 -50
SMB202 3.0 0.400 0.12 20.0 -48
SMB203 3.0 0.400 0.14 20.0 -45
SMB204 4.0 0.425 0.15 20.0 -52
SMB205 4.0 0.425 0.15 20.0 -50
SMB206 4.0 0.425 0.12 20.0 -48
SMB207 4.0 0.425 0.14 20.0 -45
SMB208 4.0 0.450 0.14 20.0 -52
SMB209 4.0 0.450 0.15 20.0 -50
SMB210 5.0 0.450 0.14 20.0 -48
SMB211 5.0 0.450 0.25 20.0 -45
SMB212 5.0 0.475 0.21 20.0 -52
SMB213 5.0 0.475 0.15 20.0 -50
SMB214 5.0 0.475 0.12 20.0 -48
SMB215 5.0 0.475 0.15 20.0 -45

High Barrier Schottky Diodes

Part Number Breakdown
Voltage
@ 10 μA
MIN
(V)
Forward
Voltage
@ 1 mA
MAX
(V)
Junction
Capacitance
@ 0 Vdc 1 Mhz
TYP
(V)
Series
Resistance
@ 5 mM
TYP
(Ohms)
Tangential
Signal
Sensitivity
TYP
(dB)
SHB300 5.0 0.500 0.14 25.0 -52
SHB301 5.0 0.500 0.20 25.0 -50
SHB302 5.0 0.500 0.12 25.0 -48
SHB303 5.0 0.500 0.14 25.0 -45
SHB304 5.0 0.525 0.15 25 -52
SHB305 5.0 0.525 0.15 25.0 -50
SHB306 5.0 0.525 0.12 25.0 -48
SHB307 5.0 0.525 0.14 25.0 -45
SHB308 6.0 0.550 0.14 25.0 -52
SHB309 6.0 0.550 0.15 25.0 -50
SHB310 6.0 0.550 0.14 25.0 -48
SHB311 6.0 0.550 0.25 25.0 -45
SHB312 6.0 0.600 0.21 25.0 -48
SHB313 6.0 0.600 0.15 25.0 -45
SHB314 6.0 0.600 0.12 25.0 -42
SHB315 6.0 0.600 0.15 25.0 -40

Maximum Ratings

Operating Temperature Storage Temperature Power Dissipation @ 25ºC
-55ºC to +150ºC -65ºc to +200ºC 250mW
(derate linearly to zero at 150º C)

Features:

  • Multi-junction Chips
  • Low 1/F Noise
  • Small Junction Capacitance

Applications:

For use in mixers, detectors, doublers, and modulators.

 

Downloads:

The Ubiquitous Microwave Diode. Chapter 1: Schottky Diodes
Blog

The Ubiquitous Microwave Diode. Chapter 1: Schottky Diodes

Tech Brief Describes the Best Eutectic Die-attach Method for MMICs in Hybrid Assemblies
Resource

Tech Brief Describes the Best Eutectic Die-attach Method for MMICs in Hybrid Assemblies

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