The 1N series point contact mixer diodes perform into the Ka-band. Each device in the series ideally designed with noise figures as low as 5.5 dB at 3.060 GHz and 6.0 dB at 9.375 GHz. With VSWR’s of 1.3:1 and impedances ranging from 200-600Ω, these devices can serve as drop in replacements for all military and commercial requirements. These point contact mixer diodes are designed in cartridge style packages with mechanical reliability with operating temperatures ranging from -55°C to 150°C.
These diodes employ epitaxial silicon growth in a specific reactor for optimized performance and are suitable for stripline applications as well as for use in designs of doublers, modulators, and double balanced mixers.