SemiGen, Inc. has added a series of new limiter diodes to its expanding product offerings, SLP7100 series.
The SLP7100 limiter diodes are processed with a high-resistivity epitaxial wafer (epi) that has thin intrinsic layers. These devices are 2 to 20 microns thick and can be gold doped to achieve specific performance goals. The SLP7100 limiter diodes are used in passive or active limiter designs in the 100 MHz to 30 GHz frequency ranges and feature a low capacitance and resistance as well as a turn-on time as low as 5ns. These easily bondable limiters come with a maximum input power ranging from +47 dBm to +66 dBm and a leakage output power from +19 dBm to +44 dBm. Typical insertion losses range from a low 0.10 dB to a maximum of 0.2 dB.
These limiters are ideally suited for high-power applications, radar, EW, and communications systems as protection against unwanted power surges or spikes for low noise components. The SLP7100 series can be supplied in chip form or in twenty different package varieties offered through SemiGen.