Step Recovery Diodes (SRDs) utilize controlled grown junction epitaxial silicon combined with a silicon dioxide passivation to ensure greater stability and reliability. Our SRDs offer low snap time through voltages ranging from 8 VDC to 120 VDC. Capacitances at 6 VDC range from 0.2 pF to 3 pF. Discontinued by many suppliers, we've opted to produce these devices for customers servicing legacy RF and microwave systems.The SRDs are ideally suited for signal generation applications including pulse generators, and parametric amplifiers.
Visit our Product Library to download a full datasheet on the SSR series of Step Recovery Diodes.
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