SemiGen


Schottky Barrier Diodes

SemiGen’s Silicon Schottky Diodes are designed for applications through 40Ghz. The special process technology utilizes various metal schemes to provide excellent performance of Low, Medium, and High Barrier applications. The end result is a low resistance diode with tightly controlled capacitance which allows for optimum performance. Low conversation loss and superior TSS make these diodes ideal for detector / mixer applications with frequency ranges from S band to Ka band as well as modulators, lower power limiters and high speed switches.

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Low Barrier Schottky Diodes

Part Number Breakdown
Voltage
@ 10 μA
MIN
(V)
Forward
Voltage
@ 1 mA
MAX
(V)
Junction
Capacitance
@ 0 Vdc 1 Mhz
TYP
(V)
Series
Resistance
@ 5 mM
TYP
(Ohms)
Tangential
Signal
Sensitivity
TYP
(dB)
SLB100 3.0 0.250 0.14 20.0 -55
SLB101 3.0 0.280 0.20 20.0 -52
SLB102 3.0 0.300 0.12 20.0 -50
SLB103 3.0 0.320 0.14 20.0 -48
SLB104 3.0 0.250 0.15 20.0 -55
SLB105 3.0 0.280 0.15 20.0 -52
SLB106 3.0 0.300 0.12 20.0 -50
SLB107 3.0 0.320 0.14 20.0 -48
SLB108 3.0 0.250 0.14 20.0 -55
SLB109 3.0 0.280 0.15 20.0 -52
SLB110 3.0 0.300 0.14 20.0 -50
SLB111 3.0 0.320 0.25 20.0 -48
SLB112 4.0 0.250 0.20 20.0 -55
SLB113 4.0 0.280 0.15 20.0 -52
SLB114 4.0 0.300 0.12 20.0 -50
SLB115 4.0 0.320 0.15 0.35 -48

Medium Barrier Schottky Diodes

Part Number Breakdown
Voltage
@ 10 μA
MIN
(V)
Forward
Voltage
@ 1 mA
MAX
(V)
Junction
Capacitance
@ 0 Vdc 1 Mhz
TYP
(V)
Series
Resistance
@ 5 mM
TYP
(Ohms)
Tangential
Signal
Sensitivity
TYP
(dB)
SMB200 3.0 0.400 0.14 20.0 -52
SMB201 3.0 0.400 0.20 20.0 -50
SMB202 3.0 0.400 0.12 20.0 -48
SMB203 3.0 0.400 0.14 20.0 -45
SMB204 4.0 0.425 0.15 20.0 -52
SMB205 4.0 0.425 0.15 20.0 -50
SMB206 4.0 0.425 0.12 20.0 -48
SMB207 4.0 0.425 0.14 20.0 -45
SMB208 4.0 0.450 0.14 20.0 -52
SMB209 4.0 0.450 0.15 20.0 -50
SMB210 5.0 0.450 0.14 20.0 -48
SMB211 5.0 0.450 0.25 20.0 -45
SMB212 5.0 0.475 0.21 20.0 -52
SMB213 5.0 0.475 0.15 20.0 -50
SMB214 5.0 0.475 0.12 20.0 -48
SMB215 5.0 0.475 0.15 20.0 -45

High Barrier Schottky Diodes

Part Number Breakdown
Voltage
@ 10 μA
MIN
(V)
Forward
Voltage
@ 1 mA
MAX
(V)
Junction
Capacitance
@ 0 Vdc 1 Mhz
TYP
(V)
Series
Resistance
@ 5 mM
TYP
(Ohms)
Tangential
Signal
Sensitivity
TYP
(dB)
SHB300 5.0 0.500 0.14 25.0 -52
SHB301 5.0 0.500 0.20 25.0 -50
SHB302 5.0 0.500 0.12 25.0 -48
SHB303 5.0 0.500 0.14 25.0 -45
SHB304 5.0 0.525 0.15 25 -52
SHB305 5.0 0.525 0.15 25.0 -50
SHB306 5.0 0.525 0.12 25.0 -48
SHB307 5.0 0.525 0.14 25.0 -45
SHB308 6.0 0.550 0.14 25.0 -52
SHB309 6.0 0.550 0.15 25.0 -50
SHB310 6.0 0.550 0.14 25.0 -48
SHB311 6.0 0.550 0.25 25.0 -45
SHB312 6.0 0.600 0.21 25.0 -48
SHB313 6.0 0.600 0.15 25.0 -45
SHB314 6.0 0.600 0.12 25.0 -42
SHB315 6.0 0.600 0.15 25.0 -40

Maximum Ratings

Operating Temperature Storage Temperature Power Dissipation @ 25ºC
-55ºC to +150ºC -65ºc to +200ºC 250mW
(derate linearly to zero at 150º C)

Features:

  • Multi-junction Chips
  • Low 1/F Noise
  • Small Junction Capacitance

Applications:

For use in mixers, detectors, doublers, and modulators.

 

Downloads:

 

pk10
PK 10
pk19
PK 19
pk20
PK 20
pk25
PK 25
pk28
PK 28
pk32
PK 32
pk37
PK 37
pk50
PK 50
pk75
PK 75
pk100
PK 100



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